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Molecular Beam Epitaxy Laboratory Contact person for lab facilities: NAME: D.T. McInturff PHONE: 765-494-0633 FAX: 765-494-0239 E-MAIL: mcntrff@ecn.purdue.edu Purpose of lab: Growth of III-V compound semiconductors. Characterization via Hall and C-V is also avasilable. Description of lab: 3 EPI - Gen II MBE's. Each machine has a slightly different capability but as a whole the lab can accomodate orders for GaAs, AlGaAs, InAs, InAlAs, InGaAs, InP, GaP and InGaP. List & type of equipment available: (3) EPI Gen II MBE's (1) Hall Measurement system (1) Capacilance - Voltage measurement system (1) Photolithography laboratory Is the usage of equipment available for only departmental research or is it available for other Purdue University departments, other Universities, and/or external/outside company research? Available to all of the above through departmental cost center. Policies and rules of use for available equipment (who can use the equipment, cost of equipment, how it is organized, etc.) Equipment is supervised and run by trained staff. Orders for epitaxial growths can be placed with a technician who will perform the actual growth. Site related questions or comments? becky@physics.purdue.edu last modified: Tuesday, 13-Feb-01 16:23:54 EST